JPH05864B2 - - Google Patents

Info

Publication number
JPH05864B2
JPH05864B2 JP57232323A JP23232382A JPH05864B2 JP H05864 B2 JPH05864 B2 JP H05864B2 JP 57232323 A JP57232323 A JP 57232323A JP 23232382 A JP23232382 A JP 23232382A JP H05864 B2 JPH05864 B2 JP H05864B2
Authority
JP
Japan
Prior art keywords
region
impurity
semiconductor
conductivity type
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57232323A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59121864A (ja
Inventor
Shinji Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57232323A priority Critical patent/JPS59121864A/ja
Publication of JPS59121864A publication Critical patent/JPS59121864A/ja
Publication of JPH05864B2 publication Critical patent/JPH05864B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57232323A 1982-12-27 1982-12-27 半導体装置 Granted JPS59121864A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57232323A JPS59121864A (ja) 1982-12-27 1982-12-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57232323A JPS59121864A (ja) 1982-12-27 1982-12-27 半導体装置

Publications (2)

Publication Number Publication Date
JPS59121864A JPS59121864A (ja) 1984-07-14
JPH05864B2 true JPH05864B2 (en]) 1993-01-06

Family

ID=16937394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57232323A Granted JPS59121864A (ja) 1982-12-27 1982-12-27 半導体装置

Country Status (1)

Country Link
JP (1) JPS59121864A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776960A (ja) * 1993-09-09 1995-03-20 Sankyo Alum Ind Co Ltd スクリーン体の防音方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS628552A (ja) * 1985-07-04 1987-01-16 Toshiba Corp 半導体装置
JPH09199513A (ja) * 1996-01-19 1997-07-31 Mitsubishi Electric Corp バイポーラトランジスタおよび該バイポーラトランジスタを有する半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370677A (en) * 1976-12-06 1978-06-23 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776960A (ja) * 1993-09-09 1995-03-20 Sankyo Alum Ind Co Ltd スクリーン体の防音方法

Also Published As

Publication number Publication date
JPS59121864A (ja) 1984-07-14

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